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S.A.A. Oloomi, A. Saboonchi and A. Sedaghat, Parametric Study of Nanoscale Radiative Properties of Doped Silicon Multilayer Structures, World Applied Sciences Journal 8 (10): 1200-1204, 2010.

S.A.A. Oloomi, A. Saboonchi and A. Sedaghat, Parametric Study of Nanoscale Radiative Properties of Doped Silicon Multilayer Structures, World Applied Sciences Journal 8 (10): 1200-1204, 2010.

 

Parametric Study of Nanoscale Radiative Properties of Doped Silicon Multilayer Structures
 
S.A.A. Oloomi, A. Saboonchi and A. Sedaghat
 
Department of Mechanical Engineering,
Isfahan University of Technology, Isfahan, 84156-83111, I.R. of Iran
 
Abstract:
 
Thin film coatings play an important role in the semiconductor industries and micro electromechanical
and nano electromechanical equipments. In this paper, the doped silicon with donors and acceptors with
different concentrations are studied and the dioxide silicone thin film is compared at different temperatures.
From the results, it is observed that the concentrations highly affect the radiative properties of doped silicon
multilayer at temperatures below 600°K. At temperatures below 600°K the concentration and the type of
impurities have important effects on the radiative properties of the film. Moreover, the effects of ions are
considerable for the concentrations higher than 1×1016cmG3. By increasing temperature, a lattice scattering
phenomenon becomes dominant because of increasing the concentration of the phonons. For higher
temperatures, this effect is reduced due to faster movement of energy carriers and a decrease in the Coulomb
force between ions. More interestingly, it is observed from the results that the reflectance for the wavelength
about 400nm in the most cases is constant which offers a good choice for filtering ultraviolet waves.
 
PACS Numbers: 68.37.Ef - 81.07.-b
 
Key words: Doped Silicon % Donors % Acceptors % Nanoscale % Concentration and Temperature
Journal Papers
Month/Season: 
September
Year: 
2010
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