S.A.A. Oloomi, A. Saboonchi and A. Sedaghat, Parametric Study of Nanoscale Radiative Properties of Doped Silicon Multilayer Structures, World Applied Sciences Journal 8 (10): 1200-1204, 2010.

Parametric Study of Nanoscale Radiative Properties of Doped Silicon Multilayer Structures

S.A.A. Oloomi, A. Saboonchi and A. Sedaghat

Department of Mechanical Engineering,

Isfahan University of Technology, Isfahan, 84156-83111, I.R. of Iran

Abstract:

Thin film coatings play an important role in the semiconductor industries and micro electromechanical

and nano electromechanical equipments. In this paper, the doped silicon with donors and acceptors with

different concentrations are studied and the dioxide silicone thin film is compared at different temperatures.

From the results, it is observed that the concentrations highly affect the radiative properties of doped silicon

multilayer at temperatures below 600°K. At temperatures below 600°K the concentration and the type of

impurities have important effects on the radiative properties of the film. Moreover, the effects of ions are

considerable for the concentrations higher than 1×1016cmG3. By increasing temperature, a lattice scattering

phenomenon becomes dominant because of increasing the concentration of the phonons. For higher

temperatures, this effect is reduced due to faster movement of energy carriers and a decrease in the Coulomb

force between ions. More interestingly, it is observed from the results that the reflectance for the wavelength

about 400nm in the most cases is constant which offers a good choice for filtering ultraviolet waves.

PACS Numbers: 68.37.Ef - 81.07.-b

Key words: Doped Silicon % Donors % Acceptors % Nanoscale % Concentration and Temperature

Journal Papers

Month/Season:

September

Year:

2010

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