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S.A.A. Oloomi, A. Saboonchi, A. Sedaghat, Thermal Radiative Properties of v Nanoscale Semiconductors with vv Incoherent Formulation , Majlesi Journal of Mechanical Engineering, Vol. 3/ No. 2/ Winter-2010.

S.A.A. Oloomi, A. Saboonchi, A. Sedaghat, Thermal Radiative Properties of v Nanoscale Semiconductors with vv Incoherent Formulation , Majlesi Journal of Mechanical Engineering, Vol. 3/ No. 2/ Winter-2010.

 

Thermal Radiative Properties of Nanoscale Semiconductors with Incoherent Formulation
 
Seyed Amir Abbas Oloomi*
Department of Mechanical Engineering,
Isfahan University of Technology, Isfahan, Iran
*Corresponding author
Ahmad Saboonchi
Department of Mechanical Engineering,
Isfahan University of Technology, Isfahan, Iran
Ahmad Sedaghat
Department of Mechanical Engineering,
Isfahan University of Technology, Isfahan, Iran
 
Abstract:
 
Rapid thermal processing (RTP) has become a key technology for
semiconductor device manufacturing in a variety of applications, such as thermal
oxidation, annealing, and thin-film growth. Hence, understanding the radiative properties
of silicon and other relevant materials is essential for the analysis of the thermal transport
processes. We have analyzed and calculated the spectral, directional and temperature
dependency of radiative properties of a three layers material using transfer-matrix method.
In the present work empirical expressions for calculating the optical constants of materials
are carefully selected. The studied examples using silicon wafer and either silicon dioxide
or silicon nitride coating demonstrate the strong influence of coating and coating thickness
on the radiative properties. This study helps to gain a better understanding of the radiative
properties of semitransparent wafers with different coatings and will have an impact not
only on semiconductor processing but also on thin film solar cells. Results showed that
silicon dioxide coating has higher reflectance than silicon nitride coating for visible
wavelengths. Therefore coatings act as wavelength selective emitters for radiative energy
conversion and thermal radiation detection. In visible wavelengths the reflectance
increases as the temperature increases, because of decreasing emittance but in infrared
wavelengths the reflectance and transmittance decrease as the temperature increases. The
layer thicknesses need to be optimized to achieve maximum transmittance for the given
materials. Maximum transmittance also depends on the type of materials and its
temperature.
 
Keywords: Incoherent Formulation- Nano scale- Properties- Semiconductor- Thermal
Radiative
 
Reference: Oloomi, S. A. A., Saboonchi, A., Sedaghat, A., "Thermal Radiative Properties
of Nanoscale Semiconductors with Incoherent Formulation", Majlesi Journal of
Mechanical Engineering, Vol. 3, No. 2, 2010, pp. 45–52.
 
Biographical notes: S. A. A. Oloomi is currently PhD Student in mechanical engineering
at Isfahan University of Technology. His current research interest includes nanosclae
radiative properties and trigeneration systems. A. Saboonchi is Associate Professor
of mechanical engineering at the Isfahan University of Technology, Iran. He received his
PhD in mechanical engineering from Okla University, USA. His current research focuses
on heat transfer. A. Sedaghat is Assistant Professor of mechanical engineering on
aerospace at the Isfahan University of Technology, Iran. He received his PhD in aerospace
engineering from The University of Manchester, UK. His current research focuses on
aerodynamics, hydrodynamics and CFD.
Journal Papers
Month/Season: 
Winter
Year: 
2010