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S.A.A.Oloomi*1, A.Saboonchi**2, and A. Sedaghat**, Effects of Incidence Angle on Thermal Radiative Properties of Nanoscale Semiconductors, Recent Researches in Mechanics, Transportation and Culture, Vouliagmeni, Athens, Greece, December 29-31, 2010.

Recent Researches in Mechanics, Transportation and Culture

 

6th WSEAS International Conference on APPLIED and
THEORETICAL MECHANICS (MECHANICS '10)
International Conference on AUTOMOTIVE and
TRANSPORTATION SYSTEMS (ICAT '10)
International Conference on ARTS and CULTURE (ICAC '10)
 
Vouliagmeni, Athens, Greece
December 29-31, 2010
 
Effects of Incidence Angle on Thermal Radiative Properties of Nanoscale Semiconductors
 
S.A.A.Oloumi*1, A.Saboonchi**2, and A. Sedaghat**3
 
* Department of Material Engineering, Islamic Azad University, Yazd Branch, Yazd, Iran
** Department of Mechanical Engineering, Isfahan University of Technology, Isfahan, Iran
 
Abstract:
 
Thin film coatings play an important role in the semiconductor industries and micro
electromechanical and nano electromechanical equipments. This work uses transfer-matrix method for
calculating the radiative properties. Lightly doped silicon is used. The considered wavelengths are 0.9 μm and
2.7 μm. Results showed that at high temperatures, transmittance becomes negligible. At low temperatures, the
emissivity of silicon is a complex function of wavelength. The change in reflectivity and emittance with the
angle of incidence is very small from 0° to 70° and they change significantly beyond 70° in the wavelength of
0.9 μm. The transmittance is considerable in the wavelength of 2.7 μm. The transmittance decreases with
increasing of temperature in this wavelength. Results also showed that the change in transmittance with the
angle of incidence is very small from 0° to 70° and the transmittance decreases rapidly beyond 70° in the
wavelength of 2.7 μm. The reflectance increases when incidence angle increases and the emittance decreases
with increasing in incidence angle for lightly doped silicon wafer coated with a silicon nitride film on both
sides at 500ºC.
Key-Words: Incidence Angle, Emittance, Transmittance, Lightly Doped Silicon, Nanoscale.
 

 

Conference Papers
Month/Season: 
December
Year: 
2010
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