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S. A. A. Oloomi*, A. Saboonchi and A. Sedaghat, Effects of incidence polarization on radiative properties of doped silicon multilayer structures, Scientific Research and Essays Vol. 5(14), pp. 1840-1844, 18 July, 2010.
S. A. A. Oloomi*, A. Saboonchi and A. Sedaghat, Effects of incidence polarization on radiative properties of doped silicon multilayer structures, Scientific Research and Essays Vol. 5(14), pp. 1840-1844, 18 July, 2010.
Full Length Research Paper Effects of incidence polarization on radiative properties of doped silicon multilayer structures
S. A. A. Oloomi*, A. Saboonchi and A. Sedaghat
Department of Mechanical Engineering, Isfahan University of Technology, Isfahan, 84156-83111, I. R. of Iran.
Accepted 19 May, 2010
Study of the surfaces which covered by thin films are very important. In this paper, the doped silicon
with donors and acceptors with different concentrations coated by silicon dioxide and different
polarization incident angles are studied. Results show that effect of doped ions for low concentrations
is not considerable, so the ion effects in the scattering time become apparent for the concentrations
more than. Results also show that the difference between S-polarization and P-polarization increases
with increasing of incidence angle. The reflectance of S-polarization is greater than the reflectance of Ppolarization.
When the incident radiation is unpolarized, the radiative properties are averaged over p
and s polarizations. Thermal radiaitive properties of nanoscale multilayer structures strongly depend on
impurity types and incidence polarization. Therefore industrial requirements are supported by selecting
donors or acceptors and s or p incidence polarization.
Key words: Doped silicon, incidence angle, nanoscale, P-polarization, radiative properties, S-polarization.
Journal Papers
Month/Season:
July
Year:
2010
