S.A.A. Oloomi, A. Saboonchi and A. Sedaghat, Effects of Incidence Angle on Nanoscale Radiative Properties of Doped Silicon Multilayer Structures, World Applied Sciences Journal 8 (10): 1234-1239, 2010.

S.A.A. Oloomi, A. Saboonchi and A. Sedaghat, Effects of Incidence Angle on Nanoscale Radiative Properties of Doped Silicon Multilayer Structures, World Applied Sciences Journal 8 (10): 1234-1239, 2010.

 

Effects of Incidence Angle on Nanoscale Radiative Properties of Doped Silicon Multilayer Structures

 

S.A.A. Oloomi, A. Saboonchi and A. Sedaghat

Department of Mechanical Engineering, Isfahan University of Technology,

Isfahan, 84156-83111, I.R. of Iran

 

Abstract:

 

This work uses transfer-matrix method for calculating the radiative properties. Doped silicon is used

and Coherent Formulation is applied. The considered wavelengths are 0.5 μm for visible range and 0.9 μm for

infrared wavelength. Results showed that in visible wavelength, reflectance increases when incidence

angle increases up to 50° and then a little decreasing happens for reflectance till incidence angle reaches 65°.

Reflectance increases rapidly for incidence angle between 65° to 89°. In infrared wavelength, reflectance

increases smoothly with increasing in incidence angle up to 54° for silicon dioxide coating and then it increases

rapidly. But for silicon nitride coating the reflectance decreases with increasing incidence angle up to 54° and

then it increases rapidly. In infrared wavelength, Silicon dioxide coating has higher emittance than silicon nitride

coating for 0°#2# 17° and 82°#2#89°, but for 18° #2# 81° silicon nitride coating has higher emittance than

silicon dioxide coating. Therefore thermal radiaitive properties of nanoscale multilayer structures strongly

depend on incidence angle.

 

PACS Numbers: 68.37.Ef-81.07.-b

 

Key words: Incidence Angle % Emittance % Reflectance % Doped Silicon and Nanoscale

 

Journal Papers

Month/Season: 

September

Year: 

2010

File: 

10.pdf