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S.A.A.Oloomi*1, A.Saboonchi**2, and A. Sedaghat**, Effects of Donors and Acceptors on Radiative Properties of Nanoscale Multilayer Structures at Infrared Wavelengths, Recent Researches in Mechanics, Transportation and Culture, Vouliagmeni, Athens, Greece

Recent Researches in Mechanics, Transportation and Culture

6th WSEAS International Conference on APPLIED and
THEORETICAL MECHANICS (MECHANICS '10)
International Conference on AUTOMOTIVE and
TRANSPORTATION SYSTEMS (ICAT '10)
International Conference on ARTS and CULTURE (ICAC '10)
 
Vouliagmeni, Athens, Greece
December 29-31, 2010
 
Effects of Donors and Acceptors on Radiative Properties of Nanoscale Multilayer Structures at Infrared Wavelengths
 
S.A.A.Oloomi*1, A.Saboonchi**2, and A. Sedaghat**3
 
* Department of Material Engineering, Islamic Azad University, Yazd Branch, Yazd, Iran
** Department of Mechanical Engineering, Isfahan University of Technology, Isfahan, Iran
 
Abstract:
 
Infrared imaging is used extensively for both military and civilian purposes using radiative
properties of silicon and other relevant materials. Military applications include target acquisition, surveillance,
night vision, homing and tracking. Non-military uses include thermal efficiency analysis, remote temperature
sensing, short-ranged wireless communication, spectroscopy, and weather forecasting. This work uses the
transfer-matrix method for calculating the radiative properties of silicon. For this purpose, doped silicon is
used, the coherent formulation is applied, and the Drude model for the optical constants of doped silicon is
employed. Results show that average reflectance changes from 0.3015 to 0.2060 for donor concentrations of
17 3 10 − cm and 19 3 10 − cm , respectively, indicating that average reflectance decreases with increasing
concentration. A donor concentration of 19 3 10 − cm yields an average emittance of about 2.46 times higher than
that yielded by a concentration level of 17 3 10 − cm . An acceptor concentration of 19 3 10 − cm has an average
emittance of about 2.14 higher than that of a concentration equal to 17 3 10 − cm . At infrared wavelengths, lower
reflectance occurs at higher concentrations and emittance increases with increasing concentration. Results also
show that donors and acceptors act similarly with respect to spectral radiative properties at infrared
wavelengths.
 
Key-Words: Donors- Acceptors- Nanoscale- Multilayer- Infrared Wavelength
 
 

 

Conference Papers
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December
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2010
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